P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices

Hui Chun Liu; L. Li; Louis B. Allard; Margaret Buchanan; Zbigniew R. Wasilewski; Gail J. Brown; Frank Szmulowicz; S. M. Hegde

doi:10.1117/12.304478

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8 April 1998 P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices

Hui Chun Liu, L. Li, Louis B. Allard, Margaret Buchanan, Zbigniew R. Wasilewski, Gail J. Brown, Frank Szmulowicz, S. M. Hegde

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Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304478
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We present results on p-type quantum well IR photodetectors (QWIPs) based on GaAs substrates, and discuss issues related to the optimization of their performance. Due to the fact that a p-QWIP allows normal incidence absorption, the simplicity in device fabrication makes it interesting for implementing a pixel-less imaging device based on the integration of QWIP and light emitting diode.

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Hui Chun Liu, L. Li, Louis B. Allard, Margaret Buchanan, Zbigniew R. Wasilewski, Gail J. Brown, Frank Szmulowicz, and S. M. Hegde "P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304478

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