Translator Disclaimer
Paper
8 April 1998 Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE
Author Affiliations +
Abstract
We obtained the photoluminescence spectra for CdTe(111) grown on Si(100) tilted toward <011> 1 degree, 2 degrees, 4 degrees and 8 degrees by MBE before and after RTA. It is caused by the strain due to the lattice mismatch between CdTe epitaxial layer and the substrate that the shift of peaks form CdTe(111)/Si(100) epitaxial layer was observed comparing with that of bulk. We could guess the crystal structures of the CdTe(111) epitaxial layers from the strains calculated from the quantity of the shifts. We found that the crystal structure of CdTe changed from the cubic in bulk to the tetragonal in strained as-grown samples, and from the tetragonal to the trigonal after RTA. It is caused by the different strain type that the structures are different before and after RTA because the misfit for atomic distance is dependent on the direction between CdTe(111) and Si(100). We found that the inplain compressive strains change from asymmetry to symmetry about (111) direction in CdTe(111) epitaxial layer after RTA.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae Won Kang, J. H. Leem, Y. B. Hou, H. C. Jeon, J. K. Hyun, Ho-Young Lee, Myung-Soo Han, and Suk-Ryong Hahn "Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304488
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Dislocation reduction in HgCdTe grown on CdTe/Si
Proceedings of SPIE (May 26 2016)
State Of The Art Of Infrared Detectors
Proceedings of SPIE (November 09 1977)
HgCdTe Photovoltaic Detectors On Si Substrates
Proceedings of SPIE (August 15 1988)

Back to Top