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8 April 1998 Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications
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Novel interdigitated metal-semiconductor-metal structures offer new approaches for the development of broad-area, high-speed photodetectors to be used in optical free space communications and light detection and ranging applications. Inherent advantages include: lower capacitance than typical p-i-n structures, a wide dynamic range, and ease of fabrication. We have constructed broad area metal- semiconductor-metal photodetectors (MSM-PDs) by means of epitaxial liftoff and grafting technologies. Two computer models have been used to examine the effects of design parameters on the performance of broad-area, high-speed MSM- PD devices. The first model indicates that inverting the membrane so that the electrodes are placed between the non- conducting host substrate and the semiconductor material improves the signal-to-noise ration of the device, expanding its dynamic range. This model suggests that processing of the backside of the semiconductor material with antireflection coatings further improves device performance. Carrier collection behavior described by the second model suggests new electrode configurations for improved high speed operation which can only be applied to an inverted MSM-PD carried on a thin film membrane. A number of different fully passivated large area MSM-PD configurations have been fabricated and tested. Initial dark current data are compared favorably to published results.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles B. Morrison, Andreas P. Glinz, Zheng Zhu, James H. Bechtel, Steven M. Frimel, and Kenneth P. Roenker "Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998);

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