Translator Disclaimer
Paper
5 May 1998 Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications
Author Affiliations +
Abstract
We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul L. Heremans, Patrick Merken, Jan Genoe, Reiner Windisch, Chris A. Van Hoof, and Gustaaf Borghs "Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications", Proc. SPIE 3288, Optoelectronic Interconnects V, (5 May 1998); https://doi.org/10.1117/12.307579
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top