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16 April 1998 Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining
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Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305555
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India
Abstract
The C-V measurement for MOS capacitor technique has been adapted to investigate the anisotropic electrochemical etching of silicon for bulk micromachining C-V characteristics of the etching cell have been obtained during the electrochemical etching process. The behavior of the characteristics has been explained on the basis of various layers at the etching interface.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ami Chand, Janak Singh, and Sudhir Chandra "Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305555
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