Pressure-assisted fusion bonding of silicon wafers

J. S. Deepa Nair; Dinesh Prabhu; Parimi Ramaseshagiri Rao; Amitava DasGupta; S. Karmalkar; Nilanjan Dasgupta; Kunchinadka Narayana Hari Bhat

doi:10.1117/12.305556

16 April 1998 Pressure-assisted fusion bonding of silicon wafers

J. S. Deepa Nair, Dinesh Prabhu, Parimi Ramaseshagiri Rao, Amitava DasGupta, S. Karmalkar, Nilanjan Dasgupta, Kunchinadka Narayana Hari Bhat

Author Affiliations +

Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305556
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India

Abstract

Silicon-to-silicon bonding with an intermediate oxide layer is an important aspect of the fabrication of microsensors and actuators. In this work, we have developed a novel, two step, pressure-assisted fusion bonding process which has proved to be extremely successful in bonding two silicon wafers. Moreover, as this process does not require a very high degree of surface cleanliness and flatness, it is more suitable for practical applications. In the first step of the process, after making the two wafer surfaces hydrophillic, the wafer pair assembly is slowly heated to 100 - 300 degree(s)C while applying pressure and voltage across them in order to ensure intimate contact. In the second step, the partially bonded wafers are heated to 1050 degree(s)C. The bonds thus formed are extremely strong as shown by fracture strength measurements. The bond strength measured is of the order of 40 kg/cm². The bonded wafer pair has also been cleaved (without disturbing the bonding) to demonstrate that the bonding is indeed strong enough to withstand further processing.

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J. S. Deepa Nair, Dinesh Prabhu, Parimi Ramaseshagiri Rao, Amitava DasGupta, S. Karmalkar, Nilanjan Dasgupta, and Kunchinadka Narayana Hari Bhat "Pressure-assisted fusion bonding of silicon wafers", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305556

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