Analysis, design, and optimization of ion-beam lithography masks

Richard O. Tejeda; Roxann L. Engelstad; Edward G. Lovell; Ivan L. Berry

doi:10.1117/12.309624

5 June 1998 Analysis, design, and optimization of ion-beam lithography masks

Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, Ivan L. Berry

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309624
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The error budget allotted to a lithographic mask is generally only a small fraction of the critical dimension of the device features. Consequently, ion projection lithography in the sub-0.13 micrometers technology regime will place large demands on image placement accuracy, a component of which is mask distortion. During the design stage then, it is desirable to identify those intrinsic loads which distort the mask pattern from its intended shape and, ultimately, to reduce those distortions to an acceptable level. This paper assesses the in-plane distortions (IPD) due to gravity as a function of the mask's geometric parameters. The optimal mask geometry is identified by minimizing the IPD function.

Citation Download Citation

Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, and Ivan L. Berry "Analysis, design, and optimization of ion-beam lithography masks", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309624

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