Critical dimension and write time performance: a next-generation vector electron-beam mask patterning system

Carl M. Rose; Lawrence C. Wang; Manny Ferreira

doi:10.1117/12.309584

5 June 1998 Critical dimension and write time performance: a next-generation vector electron-beam mask patterning system

Carl M. Rose, Lawrence C. Wang, Manny Ferreira

Author Affiliations +

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309584
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

This paper will provide a comprehensive review of the critical dimension performance of the V2000 in the areas of CD uniformity, CD linearity, CD precision, CD butting, CD X- Y bias, and line edge roughness. In addition a thorough comparison will be made of the writing times achieved for a wide range of masking levels on both advanced microprocessor and memory devices, as well as technically challenging test plates. These write times will be compared to those achieved by commercially available raster scan e-beam tools and laser beam systems.

Citation Download Citation

Carl M. Rose, Lawrence C. Wang, and Manny Ferreira "Critical dimension and write time performance: a next-generation vector electron-beam mask patterning system", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309584

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