Paper
5 June 1998 Extension of the traditional optical model for investigation into EUV projection lithography capabilities
Vladimir V. Ivin, Kevin D. Lucas, Tariel M. Makhviladze, Vadim V. Manuylov, Marina G. Medvedeva
Author Affiliations +
Abstract
A traditional aerial image model has been used to demonstrate a good applicability of 13nm EUV projection lithography to printing sub-0.1mm features. To estimate the potential of a possible candidate for EUV optics--a two- mirror projection system, we investigated the issues of aerial image formation by the reflective optics with account for aberrations. We have developed a simplified method to determine the optical parameters of the ring-field system that minimize aberrations of the 3rd order and, partially, of the 5th. As a result, we have found that the uncompensated aberrations contribute to a sharply asymmetrical impulse response of the ring-field projection system, where the characteristic width of the impulse response in some directions might be two times larger than the diffraction limit.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Ivin, Kevin D. Lucas, Tariel M. Makhviladze, Vadim V. Manuylov, and Marina G. Medvedeva "Extension of the traditional optical model for investigation into EUV projection lithography capabilities", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309628
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Cited by 1 scholarly publication.
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KEYWORDS
Extreme ultraviolet

Objectives

Photomasks

EUV optics

Projection systems

Mirrors

Projection lithography

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