Optical thin-film decomposition for DUV positive-tone resist process monitoring

Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos; Joseph J. Bendik; Ronald P. Kovacs

doi:10.1117/12.308750

8 June 1998 Optical thin-film decomposition for DUV positive-tone resist process monitoring

Xinhui Niu, Nickhil H. Jakatdar, Costas J. Spanos, Joseph J. Bendik, Ronald P. Kovacs

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308750
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

New metrology for characterizing chemically amplified resist is needed in order to meet the stringent demands of the DUV lithographic technologies. In this paper, we present a general model for DUV resist optical constants. In this model, we assume that the photoresist is homogeneous and can be decomposed into several 'components' according to their distinct n and k signatures over a broad range of wavelengths. Each component is described by a Kramers-Kronig based dispersion relation. A global optimization with about 18 parameters is solved for the optical thin-film decomposition, using an intelligent simulated annealing algorithm. Various de-noising techniques that can be used on the collected data are also described.

Citation Download Citation

Xinhui Niu, Nickhil H. Jakatdar, Costas J. Spanos, Joseph J. Bendik, and Ronald P. Kovacs "Optical thin-film decomposition for DUV positive-tone resist process monitoring", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308750

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