Ultralow-energy imaging for metrology

David C. Joy

doi:10.1117/12.308753

8 June 1998 Ultralow-energy imaging for metrology

David C. Joy

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308753
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Ultra-low energy (ULV) scanning electron microscopy is performed in the range between 20 eV and 100 eV. By the use of a retarding field cathode lens assembly ULV imaging with a spatial resolution in the nanometer range has been achieved. This performance is close the predicted theoretical value but is limited by astigmatism and signal to noise considerations. The modes of signal formation at ULV are well suited for metrology and this type of operation may offer reduced beam damage and charging artifacts.

Citation Download Citation

David C. Joy "Ultralow-energy imaging for metrology", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308753

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