Chemically amplified resist technology for i-line applications

Medhat A. Toukhy; Sanjay Malik; Andrew J. Blakeney; Karin R. Schlicht

doi:10.1117/12.312371

29 June 1998 Chemically amplified resist technology for i-line applications

Medhat A. Toukhy, Sanjay Malik, Andrew J. Blakeney, Karin R. Schlicht

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312371
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

This paper presents a discussion on the development of i- line resist chemistry as anticipated by the future technology and the needs of the new exposure tools. Commercially available high numerical aperture (NA) and low NA wide field i-line steppers stand to gain in throughput as the resist photospeed is increased. However, the advantages of developing 50 mJ/cm² or faster resist products capable of less than 0.3 micrometers resolution is not clear at the present time. Future development of i-line scanners and greater demands on throughput may give rise to the need for such products. Conventional novolak based/diazonaphthoquinone resist chemistry is not capable of providing such performance. Chemically amplified (CA) resist products employed in deep ultra violet (DUV) regime demonstrated the capability of this chemistry to deliver high resolution and photospeed performance. If such a performance is to be needed in i-line, then CA i-line resist chemistry would be the technology of choice. Significant resist cost reduction is possible if i-line transparent phenolic resins, such as novolaks, can be used replacing expensive poly-hydroxystyrene base polymers that are necessary to use in DUV resist products.

Citation Download Citation

Medhat A. Toukhy, Sanjay Malik, Andrew J. Blakeney, and Karin R. Schlicht "Chemically amplified resist technology for i-line applications", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312371

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