Effect of the dissolution contrast on process margins in 193-nm lithography

Makoto Takahashi; Shinji Kishimura; Takuya Naito; Takeshi Ohfuji; Masaru Sasago

doi:10.1117/12.312409

29 June 1998 Effect of the dissolution contrast on process margins in 193-nm lithography

Makoto Takahashi, Shinji Kishimura, Takuya Naito, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312409
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

We examine the process margins of chemically amplified ArF resists designed for the single layer process. We measured the dissolution characteristics and investigated how the dissolution contrast affected the lithographic performance. We confirmed that high dissolution contrast can improve both the resolution and process margin. A 0.13 micrometers line and space pattern can be obtained. However, the depth of focus is not good enough for device fabrication. To achieve an acceptable process margin, we applied resolution enhancement techniques to the high-contrast resist. Applying off-axis illumination and an attenuated phase-shifting mask can greatly improve the process margin. 1.2 micrometers and 0.8 micrometers defocus margins were obtained at 0.15 and 0.13 micrometers line and space patterns, respectively.

Citation Download Citation

Makoto Takahashi, Shinji Kishimura, Takuya Naito, Takeshi Ohfuji, and Masaru Sasago "Effect of the dissolution contrast on process margins in 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312409

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