New method of determination of the photoresist Dill parameters using reflectivity measurements

Patrick Schiavone; Stephane Bach

doi:10.1117/12.312378

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29 June 1998 New method of determination of the photoresist Dill parameters using reflectivity measurements

Patrick Schiavone, Stephane Bach

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Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312378
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In this paper, we describe a new methodology for the determination of Dill parameters based on reflectivity measurements. In opposition to previous methods, samples are produced using the usual process steps. Silicon wafers and standard photoresist coating procedures are used. Moreover, reflectivity measurements can be performed on any reflectometer, a piece of equipment universally present in an industrial environment. A fitting procedure is performed on the reflectivity data in order to extract the ABC parameters. The delicate steps of the methods are described in the paper. Comparison with other exposure parameter extraction methods on I line resist shows good agreement. Dependence between exposure parameters and development parameter extraction is also discussed. It is shown that several empirical parameter sets can be equivalent, at least from the simulation point of view.

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Patrick Schiavone and Stephane Bach "New method of determination of the photoresist Dill parameters using reflectivity measurements", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312378

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