Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Thomas Steinhaeusler; Allen H. Gabor; Daniela White; Andrew J. Blakeney; David R. Stark; Daniel A. Miller; Georgia K. Rich; Victoria L. Graffenberg; Kim R. Dean

doi:10.1117/12.312373

29 June 1998 Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Thomas Steinhaeusler, Allen H. Gabor, Daniela White, Andrew J. Blakeney, David R. Stark, Daniel A. Miller, Georgia K. Rich, Victoria L. Graffenberg, Kim R. Dean

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312373
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The 193 nm photoresist generation will need several technological approaches in order for it to be successfully integrated into manufacturing. These approaches include bilayer, single layer and top surface imaging resists. Bilayer resists offer the advantages of thin film imaging (resolution, depth of focus) and potential advantages in plasma etch resistance due to the possibility of incorporating aromatic components into the undercoat. We have developed a prototype bilayer resist system based on a silicon containing methacrylate imageable layer and a crosslinked styrenic copolymer undercoat which has shown 0.13 micrometers resolution. In this paper we will discuss the effects of O₂-RIE and polysilicon etch on resist and substrate profile, selectivity and iso-dense resist.

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Thomas Steinhaeusler, Allen H. Gabor, Daniela White, Andrew J. Blakeney, David R. Stark, Daniel A. Miller, Georgia K. Rich, Victoria L. Graffenberg, and Kim R. Dean "Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312373

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