Photoresist and the photoresist/wafer interface with a local thermal probe

David S. Fryer; Juan J. de Pablo; Paul F. Nealey

doi:10.1117/12.312391

29 June 1998 Photoresist and the photoresist/wafer interface with a local thermal probe

David S. Fryer, Juan J. de Pablo, Paul F. Nealey

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312391
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

This paper reports the development of local differential thermal analysis and ellipsometry to measure the glass transition temperature (T_g) of thin films of photoresist. We apply the techniques to measure the glass transition temperature as a function of the film thickness of polystyrene and poly(methyl methacrylate) (PMMA). We also study the effect of the duration of post apply bake and the extent of reaction on the T_g of films of a negative photoresist, SAL605. Measurements of the T_g as a function of film thickness of polystyrene cast on native silicon oxide substrates primed with hexamethyldisiloxane show that the T_g is depressed incrementally as thickness decreases to a maximum of T_g - 20 degree(s)C for film thicknesses below 80 nm. Films of PMMA cast on native silicon oxide show a similar depression in the T_g of 10 degree(s)C for film thicknesses less than 70 nm. Our study of SAL605 photoresist finds that the T_g is not influenced by the condensation reaction between the crosslinker and resin. We find that there is a strong plasticizing effect by the residual solvent in SAL605 over short PAB times that can change the T_g by as much as 15 degree(s)C. The T_g reaches a steady value after 30 seconds of baking at 90 degree(s)C.

Citation Download Citation

David S. Fryer, Juan J. de Pablo, and Paul F. Nealey "Photoresist and the photoresist/wafer interface with a local thermal probe", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312391

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