Ratnam Sooriyakumaran,1 Gregory M. Wallraff,1 Carl E. Larson,1 Debra Fenzel-Alexander,1 Richard A. Di Pietro,1 Juliann Opitz,1 Donald C. Hofer,1 Douglas C. LaTulip Jr.,2 John P. Simons,2 Karen E. Petrillo,2 Katherina Babich,2 Marie Angelopoulos,2 Qinghuang Lin,3 Ahmad D. Katnani3
1IBM Almaden Research Ctr. (United States) 2IBM Thomas J. Watson Research Ctr. (United States) 3IBM Microelectronics Div. (United States)
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We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications. During the course of the investigation we determined that these monomers were acid labile. We have developed a high resolution DUV bilayer resist system based on these monomers. Although most of our work was concentrated on 248 nm lithography, we have demonstrated that this chemistry can be extended to 193 nm applications.
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Ratnam Sooriyakumaran, Gregory M. Wallraff, Carl E. Larson, Debra Fenzel-Alexander, Richard A. Di Pietro, Juliann Opitz, Donald C. Hofer, Douglas C. LaTulip Jr., John P. Simons, Karen E. Petrillo, Katherina Babich, Marie Angelopoulos, Qinghuang Lin, Ahmad D. Katnani, "Positive bilayer resists for 248- and 193-nm lithography," Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312411