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29 June 1998 Positive bilayer resists for 248- and 193-nm lithography
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Abstract
We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications. During the course of the investigation we determined that these monomers were acid labile. We have developed a high resolution DUV bilayer resist system based on these monomers. Although most of our work was concentrated on 248 nm lithography, we have demonstrated that this chemistry can be extended to 193 nm applications.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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