Resist residue generated on TiN topographic substrates in positive chemically amplified resists

Hajime Wada; Akihiro Usujima; Yuichiro Yanagishita; Kenji Nakagawa

doi:10.1117/12.312390

29 June 1998 Resist residue generated on TiN topographic substrates in positive chemically amplified resists

Hajime Wada, Akihiro Usujima, Yuichiro Yanagishita, Kenji Nakagawa

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312390
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

When positive chemically amplified resists are used on basic stepped substrates to produce patterns, a resist residue often forms at the bottom of the step. This paper discusses the results of investigating the cause of the chemically amplified resist residue formation as it is encountered during patterning on stepped substrates.

Citation Download Citation

Hajime Wada, Akihiro Usujima, Yuichiro Yanagishita, and Kenji Nakagawa "Resist residue generated on TiN topographic substrates in positive chemically amplified resists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312390

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available