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29 June 1998 ArF excimer laser for 193-nm lithography
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Abstract
Considerable progress has been made in the development of the major components for 193 nm lithography tools. Here we describe the parameters of a line-narrowed ArF excimer laser for microlithography. With a specified FWHM bandwidth of less than 0.7 pm, the laser is applicable for refractive steppers and scanners which utilize some degree of achromatization. Prototype lasers have been built to study the optimum parameters. The main challenge of the development was the achievement of high efficiency in the conversion from the laser's broadband emission into line-narrowed emission. The lasers are operated at up to 1 kHz repetition rate with a maximum power of 10 W. This paper provides an overview of the currently achievable power levels, energy stability and bandwidths and discusses future trends.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uwe Stamm, Rainer Paetzel, Juergen Kleinschmidt, Klaus Vogler, Wolfgang Zschocke, Igor Bragin, and Dirk Basting "ArF excimer laser for 193-nm lithography", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310730
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