ArF lasers for production of semiconductor devices with CD<0.15 um

Thomas P. Duffey; Todd J. Embree; Toshihiko Ishihara; Richard G. Morton; William N. Partlo; Tom A. Watson; Richard L. Sandstrom

doi:10.1117/12.310731

29 June 1998 ArF lasers for production of semiconductor devices with CD<0.15 μm

Thomas P. Duffey, Todd J. Embree, Toshihiko Ishihara, Richard G. Morton, William N. Partlo, Tom A. Watson, Richard L. Sandstrom

Author Affiliations +

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310731
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The present day notion of the extensibility of KrF laser technology to ArF is revisited. We show that a robust solution to ArF requirements can be met by significantly altering the laser's core technology-discharge chamber, pulsed power and optics. With these changes, a practical ArF tool can be developed. Some of the laser specifications are: Bandwidth: 0.6 pm (FWHM) 1.75 pm (95% Included Energy); Average Power: 5 W; Repetition Rate: 1000 Hz; Energy Stability (3(sigma) ): 20% (burst mode) 8% (continuous); Pulse Width: 25 ns.

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Thomas P. Duffey, Todd J. Embree, Toshihiko Ishihara, Richard G. Morton, William N. Partlo, Tom A. Watson, and Richard L. Sandstrom "ArF lasers for production of semiconductor devices with CD<0.15 μm", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310731

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