Paper
29 June 1998 Cross-sectional critical shape error: a novel methodology for quantifying process simulation accuracy
Mark E. Mason, Robert A. Soper
Author Affiliations +
Abstract
In an effort to quantify simulator performance, we propose a new metric -- the cross-sectional critical shape error (CCSE). This tool allows quantified comparison of actual resist patterns to simulator predictions, condensing two- and three- dimensional simulation errors into a scalar error value. This value can be used as a figure of merit to ascertain optimum simulator settings for matching actual experimental output. This effort extends previous work by Mack on the so-called 'critical shape error' (CSE) metric for evaluating differences between the mask and simulated resist patterns. While the work by Mack was directed primarily at OPC, CCSE is appropriate for quantitative simulator evaluations, simulator anchoring, head- to-head simulator evaluations, and use in optimizing cost functions (e.g. for use in Genetic Algorithms, etc.) since it compares the simulator output directly to the resist cross section.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark E. Mason and Robert A. Soper "Cross-sectional critical shape error: a novel methodology for quantifying process simulation accuracy", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310806
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KEYWORDS
Computer simulations

Digital image processing

Edge detection

Image processing

Detection and tracking algorithms

Device simulation

Error analysis

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