DUV synchrotron exposure station at CAMD

Chantal G. Khan Malek; Volker Saile; J. Michael Klopf; Louis Rupp; Steven Nguyen

doi:10.1117/12.310729

29 June 1998 DUV synchrotron exposure station at CAMD

Chantal G. Khan Malek, Volker Saile, J. Michael Klopf, Louis Rupp, Steven Nguyen

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310729
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new synchrotron radiation exposure station dedicated to deep-UV exposures has been installed at the synchrotron light source at the Center for Advanced Microstructures and Devices (CAMD). It complements the activities in synchrotron-based lithography including X-ray lithography, deep X-ray lithography, and under way, ultra-deep X-ray lithography. The UV station branches out of the X-ray lithography beamline. A retractable Si mirror reflects the incoming synchrotron radiation beam by 90 deg through a CaF₂ window. Three insertable bandpass filters allow the selection of broad-band transmission spectra around the wavelengths of two excimer lasers at 248 nm (KrF) and 193 nm (ArF), and at a shorter wavelength of 187 nm. The station allows for exposures under vacuum or in an inert gas atmosphere.

Citation Download Citation

Chantal G. Khan Malek, Volker Saile, J. Michael Klopf, Louis Rupp, and Steven Nguyen "DUV synchrotron exposure station at CAMD", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310729

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