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29 June 1998 DUV synchrotron exposure station at CAMD
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Abstract
A new synchrotron radiation exposure station dedicated to deep-UV exposures has been installed at the synchrotron light source at the Center for Advanced Microstructures and Devices (CAMD). It complements the activities in synchrotron-based lithography including X-ray lithography, deep X-ray lithography, and under way, ultra-deep X-ray lithography. The UV station branches out of the X-ray lithography beamline. A retractable Si mirror reflects the incoming synchrotron radiation beam by 90 deg through a CaF2 window. Three insertable bandpass filters allow the selection of broad-band transmission spectra around the wavelengths of two excimer lasers at 248 nm (KrF) and 193 nm (ArF), and at a shorter wavelength of 187 nm. The station allows for exposures under vacuum or in an inert gas atmosphere.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chantal G. Khan Malek, Volker Saile, J. Michael Klopf, Louis Rupp, and Steven Nguyen "DUV synchrotron exposure station at CAMD", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310729
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