Lithography of 180-nm design rule for 1-Gb DRAM

Dongseok Nam; Junghyun Lee; Chang-Hwan Kim; Seong-Woon Choi; Hoyoung Kang; Joo-Tae Moon

doi:10.1117/12.310727

29 June 1998 Lithography of 180-nm design rule for 1-Gb DRAM

Dongseok Nam, Junghyun Lee, Chang-Hwan Kim, Seong-Woon Choi, Hoyoung Kang, Joo-Tae Moon

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310727
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Optical lithography is the most fundamental technology for the development of 1 Gbit DRAM device. As a current status, KrF lithography is a powerful candidate for 180 nm generation because of relatively high cost of ArF lithography and its untimely applicability to mass production. In this paper, we showed that the optimized OAI system with large quadrupole offset and small opening could improve the resolution and process margin in the photo process of 180 nm level DRAM devices. We also demonstrated what the effect of CD amplification factor ((alpha) ) was related to the mask CD control and resist tone under the optimized OAI system. The result shows that the combination of the optimized OAI system and positive tone resist can give rise to the reduction of (alpha) from 4.5 to almost 1 and provide a reasonable margin.

Citation Download Citation

Dongseok Nam, Junghyun Lee, Chang-Hwan Kim, Seong-Woon Choi, Hoyoung Kang, and Joo-Tae Moon "Lithography of 180-nm design rule for 1-Gb DRAM", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310727

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