Optimization of ARC process in DUV lithography

Kyung-Jin Shim; Byoung-Il Choi; Ki-Yeop Park; Won-Kyu Lee

doi:10.1117/12.310801

29 June 1998 Optimization of ARC process in DUV lithography

Kyung-Jin Shim, Byoung-Il Choi, Ki-Yeop Park, Won-Kyu Lee

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310801
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Inorganic Anti Reflective Coating (ARC) improves Critical Dimension (CD) uniformity over an exposing field by reducing the reflectivity of the ARC/substrate system in photoresist. A key parameter of the lithographic performance of an inorganic ARC is therefore the reflectivity of the ARC/substrate system in photoresist. But it isn't a directly measurable quantity. In this paper we estimate the reflectivity of the ARC/substrate system in photoresist by measuring the reflectivity swing of the photoresist/ARC/substrate system in air. We also derive a useful relation connecting the reflectivity of the ARC/substrate system in photoresist to that in air. In the case of organic ARC, due to the planarization of the organic ARC on topography, optimization is achieved not by minimizing the reflectivity of the ARC/substrate system in photoresist but by minimizing the variation of the light intensity within the photoresist. The performance of the inorganic and organic ARC for DUV lithography is evaluated, and their differences are investigated.

Citation Download Citation

Kyung-Jin Shim, Byoung-Il Choi, Ki-Yeop Park, and Won-Kyu Lee "Optimization of ARC process in DUV lithography", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310801

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