Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask

Lay Cheng Choo; Siu Chung Tam; Alex Cheng; Ida Chui Shan Ho

doi:10.1117/12.310785

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29 June 1998 Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask

Lay Cheng Choo, Siu Chung Tam, Alex Cheng, Ida Chui Shan Ho

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Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310785
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Attenuated phase shift mask (APSM) has been considered a viable technique for contact patterning. For 250 nm lithography technology, 300 nm contact patterns are to be defined. In this paper, Solid-C has been used for aerial image simulations. Conventional and annular illumination settings are optimized for better focus latitudes, that is, large depth-of-focus (DOF), for sufficient throughput. In addition, mask transmission is optimized for different illumination settings. From our simulations of aerial images, it has been shown that a DOF of 1.35 micrometer is achieved when conventional illumination is combined with APSM at high mask transmission (approximately 8 - 10%). However a larger DOF of 1.55 micrometer can be obtained when annular illumination is used with APSM at low mask transmission (approximately 3 - 4%).

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Lay Cheng Choo, Siu Chung Tam, Alex Cheng, and Ida Chui Shan Ho "Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310785

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