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29 June 1998 Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask
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Abstract
Attenuated phase shift mask (APSM) has been considered a viable technique for contact patterning. For 250 nm lithography technology, 300 nm contact patterns are to be defined. In this paper, Solid-C has been used for aerial image simulations. Conventional and annular illumination settings are optimized for better focus latitudes, that is, large depth-of-focus (DOF), for sufficient throughput. In addition, mask transmission is optimized for different illumination settings. From our simulations of aerial images, it has been shown that a DOF of 1.35 micrometer is achieved when conventional illumination is combined with APSM at high mask transmission (approximately 8 - 10%). However a larger DOF of 1.55 micrometer can be obtained when annular illumination is used with APSM at low mask transmission (approximately 3 - 4%).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lay Cheng Choo, Siu Chung Tam, Alex Cheng, and Ida Chui Shan Ho "Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310785
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