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13 September 1982 Electron Beam Versus Optical Step-And-Repeat: A 10X Reticle And 1X Die Distortion Study Employing Nikon X-Y Laser Interferometric Metrology
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Abstract
It is becoming apparent that optical lithography will remain the dominant imaging technique in the production of semiconductor devices for some time to come. Production devices with a minimum feature size of 1.5 microns have been manufactured using lx, 5X and 10X wafer steppers. Lenses are presently being designed with higher numerical apertures and promise a resolution of one micron or less. Full field exposure instruments employing mid to deep ultraviolet illumination also promise a resolution down to one micron or less. It has taken the better part of a decade to perfect technologies in the 3-5 micron region, and it will probably take the better part of the present decade to perfect technologies in the 1-2 micron region. If optical lithography can serve our requirements for a 1-2 micron technology, photomasks will remain an important part of the overall photolithographic process. In order to achieve a 1-2 micron technology, some considerable demands will be made of the photomask manufacturer, especially in the area of overlay accuracy.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven K. Dunbrack and Gary Burns "Electron Beam Versus Optical Step-And-Repeat: A 10X Reticle And 1X Die Distortion Study Employing Nikon X-Y Laser Interferometric Metrology", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933580
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