Mix And Match Of 10:1 Wafer Steppers With Die-By-Die Alignment To 1:1 Proximity And Projection Systems

H. L. Stover; N. E. David; T. H. Lewis

doi:10.1117/12.933568

13 September 1982 Mix And Match Of 10:1 Wafer Steppers With Die-By-Die Alignment To 1:1 Proximity And Projection Systems

H. L. Stover, N. E. David, T. H. Lewis

Author Affiliations +

Proceedings Volume 0334, Optical Microlithography I: Technology for the Mid-1980s; (1982) https://doi.org/10.1117/12.933568
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

We report here the use of automatic die-by-die alignment to overlay 10:1 wafer-stepper images on patterns delineated by 1:1 proximity and projection systems. The motivation for these programs arises from considerations of cost-effectiveness and productivity while upgrading existing IC fab lines; 1:1 lithographic systems already in place can be used to generate non-critical layers, while the wafer steppers can be used to align and delineate the patterns of critical layers. Excellent intra-die overlay match is demonstrated, mixing with some of the more prevalent 1:1 systems. Practical issues relating to net wafer throughput are also illuminated.

Citation Download Citation

H. L. Stover, N. E. David, and T. H. Lewis "Mix And Match Of 10:1 Wafer Steppers With Die-By-Die Alignment To 1:1 Proximity And Projection Systems", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933568

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