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1 January 1998 Impurity distribution in layered semiconductor structures by means of IR nondestructive diagnostics
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Proceedings Volume 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering; (1998) https://doi.org/10.1117/12.299572
Event: International Workshop on New Approaches to High Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, 1997, St. Petersburg, Russian Federation
Abstract
Optical methods which provide the possibility of non-destructive control of structure changes arising from ion-photonic technological processing find of wide application for investigation of silicon and AIIIBV semiconductor compounds being of major importance in micro- and optoelectronics. IR spectroscopy of implanted, diffusive and epitaxial layers gives a rich information about the composition and impurity distribution. The influence of diffusion parameters on reconstructed impurity distribution profiles and p-n-junction depth are investigated. The role of the lattice absorption in GaAs determined by the interaction of IR radiation with optical phonons is shown for reflection and transmission spectra. For a more accurate fitting of the calculated and experimental dispersion dependencies it is necessary to take into account the concentration dependencies of the effective mass m* and the relaxation time (tau) of charge carriers. In this paper results of the computer simulation of IR spectra in the wide range of m* and (tau) variations for GaAs are presented also. It was drawn a conclusion about physical permissible values of m* and (tau) from the viewpoint of applicability of the IR diagnostics of semiconductor structures.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladislav V. Nelayev, G. V. Litvinovich, and Bronislav B. Sevruk "Impurity distribution in layered semiconductor structures by means of IR nondestructive diagnostics", Proc. SPIE 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, (1 January 1998); https://doi.org/10.1117/12.299572
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