Paper
21 August 1998 Far-infrared Ge:Ga detector for low-background space-based astronomical observations
Michael A. Patrashin, Mikio Fujiwara, Norihisa Hiromoto, Boris I. Fouks
Author Affiliations +
Abstract
A concept of a sensitive cryogenically cooled far IR detector is presented. The device consists of a photosensitive Ge:GA element with one blocking and one injecting contact. Operation of the structure as a photodetector involves two steps. The measurements of the signal occurs when the reverse polarity of the bias voltage applied to the device and the registered photocurrent is proportional to the photon influx. Since the blocking contact does not supply majority carriers into the device, the photocurrent consists only of the carriers generated by IR photons from the acceptor impurities. When the space charge accumulated on the acceptors reaches the value sufficient for significant variation of the electric field in the bulk the device is reset by applying the forward polarity of the bias, which restores the initial charge state of the impurities. Device model and experimental data illustrating properties of the structure at moderately low photon fluxes are also discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael A. Patrashin, Mikio Fujiwara, Norihisa Hiromoto, and Boris I. Fouks "Far-infrared Ge:Ga detector for low-background space-based astronomical observations", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); https://doi.org/10.1117/12.317303
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KEYWORDS
Sensors

Infrared detectors

Infrared radiation

Metals

Infrared sensors

Semiconductors

Information operations

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