Paper
20 April 1998 Infrared spectroscopy of luminescent porous silicon
Vladimir Arsenovich Makara, V. S. Stashhuk, V. B. Shevchenko
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306194
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The photoluminescence (PL) and infrared (IR) absorption spectra of porous silicon prepared in different conditions have been studied. HF post-anodization treatment was used to modify the porous silicon properties. It is shown that the samples obtained at higher current density show more intense visible PL. It was also found that there is a correlation between the intensity of luminescence peak and that of IR- absorption peaks related to the Si-O-Si and O3-Si-H modes. The obtained results suggest that surface complexes related to oxygen or hydrogen with oxygen are responsible for the intense visible PL in the samples of porous silicon subjected to HF treatment and exposed to the ambient air.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Arsenovich Makara, V. S. Stashhuk, and V. B. Shevchenko "Infrared spectroscopy of luminescent porous silicon", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306194
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KEYWORDS
Picosecond phenomena

Silicon

Oxygen

Absorption

Infrared spectroscopy

Visible radiation

Luminescence

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