Optical characterization of carbon ion implantation into Si and SiGe alloys

Alejandro Perez-Rodriguez; A. Romano-Rodriguez; Christoph Serre; L. Calvo-Barrio; O. Gonzalez-Varona; Juan Ramon Morante

doi:10.1117/12.306237

20 April 1998 Optical characterization of carbon ion implantation into Si and SiGe alloys

Alejandro Perez-Rodriguez, A. Romano-Rodriguez, Christoph Serre, L. Calvo-Barrio, O. Gonzalez-Varona, Juan Ramon Morante

Author Affiliations +

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306237
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Si and epitaxial SiGe strained and relaxed layers have been implanted with C⁺ ions to investigate the formation of SiC_y and SiGe_xC_y alloys (medium doses) as well as the ion beam synthesis of SiC in SiGe matrices (high doses). These layers have been analyzed by Raman scattering, in correlation with XRD, XPS and TEM. These data show that for implant temperature of 500 degree(s)C (crystalline target), carbon is not incorporated in substitutional sites, and (beta) -SiC precipitates aligned with the implanted matrix are formed. The residual strain and the degree of missorientation of these precipitates depend on the strain, defects and bond length of the implanted matrix. Moreover, precipitation of (beta) -SiC in the implanted region causes an enhanced Ge migration, mainly towards the surface. This determines a Ge enrichment and consequent relaxation of the Si_1-xGe_x matrix. This contrasts with the room temperature implants performed in preamorphized Si layers, where carbon incorporation in substitutional sites (C_s) takes place after thermal annealing. The maximum amount of C_s is found for the implanted dose corresponding to a peak carbon concentration of 1.3%. For higher doses, there is a degradation of the crystal quality of the recrystallized layer.

Citation Download Citation

Alejandro Perez-Rodriguez, A. Romano-Rodriguez, Christoph Serre, L. Calvo-Barrio, O. Gonzalez-Varona, and Juan Ramon Morante "Optical characterization of carbon ion implantation into Si and SiGe alloys", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306237

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KEYWORDS

Silicon carbide

Silicon

Carbon

Germanium

Crystals

Raman spectroscopy

Ion implantation

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