Paper
14 September 1998 Novel CMOS readout techniques for uncooled pyroelectric IR FPA
Tai Ping Sun, Yuan Lung Chin, Wen Yaw Chung, Shen Kan Hsiung, Jung Chuan Chou
Author Affiliations +
Abstract
Based on the application of the source follower per detector (SFD) input biasing technique, a new redout structure for the IR focal-plane-array (FPA), called the variable gain source follower per detector (VGSFD) is proposed and analyzed. The readout circuit of VGSFD of a unit cell of pyroelectric sensor under investigation, is composed of a source follower per detector circuit, high gain amplifier, and the reset switch. The VGSFD readout chip has been designed in 0.5 micrometers double-poly-double-metal n-well CMOS technology in various formats from 8 by 8 to 128 by 128. The experimental 8 by 8 VGSFD measurement results of the fabricated readout chip at room temperature have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 by 50 micrometers 2 pixel size.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tai Ping Sun, Yuan Lung Chin, Wen Yaw Chung, Shen Kan Hsiung, and Jung Chuan Chou "Novel CMOS readout techniques for uncooled pyroelectric IR FPA", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); https://doi.org/10.1117/12.321763
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Amplifiers

Thermography

Staring arrays

Infrared radiation

Pyroelectric detectors

Switches

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