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22 July 1998 128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates
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The technology was developed and 128 X 128 LWIR FPA's based on HgCdTe epitaxial layers MBE-grown on GaAs substrates with cutoff wavelength (lambda) c equals 8 micrometer and 13 micrometer was fabricated. The photosensing layer HgCdTe was graded-gap layer with the higher content of Cd to boundaries of a layer. The manufactured LWIR FPA's had NETD 32 mK and 17 mK for (lambda) c equals 8 micrometer and 13 micrometer, correspondingly, at 295 K background and 80 K operation temperatures.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitrii G. Esaev, Anatoly G. Klimenko, A. I. Kozlov, I. V. Marchishin, Victor N. Ovsyuk, N. Kh. Talipov, T. I. Zakhariash, Vladimir V. Vasilyev, Yuri G. Sidorov, and Sergey A. Dvoretsky "128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998);

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