LETI/LIR's amorphous silicon uncooled microbolometer development

Jean-Luc Tissot; Frederic Rothan; Corrinne Vedel; Michel Vilain; Jean-Jacques Yon

doi:10.1117/12.317580

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22 July 1998 LETI/LIR's amorphous silicon uncooled microbolometer development

Jean-Luc Tissot, Frederic Rothan, Corrinne Vedel, Michel Vilain, Jean-Jacques Yon

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Proceedings Volume 3379, Infrared Detectors and Focal Plane Arrays V; (1998) https://doi.org/10.1117/12.317580
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost 2D IR arrays. LETI/LIR, which has been involved in this field for a few years, has chosen resistive amorphous silicon as thermometer for its uncooled microbolometer development. After a first phase dedicated to acquisition of the most important detector parameters in order to help the modeling and technological development, an IRCMOS laboratory model (256 X 64 with a pitch of 50 micrometer) was realized and characterized. It was shown that NETD of 90 mK at f/1, 25 Hz and 300 K background can be obtained with high thermal insulation (1.2 10⁷ K/W).

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Jean-Luc Tissot, Frederic Rothan, Corrinne Vedel, Michel Vilain, and Jean-Jacques Yon "LETI/LIR's amorphous silicon uncooled microbolometer development", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317580

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