Paper
23 October 1998 Variation of the complex refractive indices with Sb-addition in Ge-Sb-Te alloy and their wavelength dependence
Sang-Youl Kim, Sang J. Kim, Hun Seo, Myong R. Kim
Author Affiliations +
Proceedings Volume 3401, Optical Data Storage '98; (1998) https://doi.org/10.1117/12.327935
Event: Optical Data Storage '98, 1998, Aspen, CO, United States
Abstract
The complex refractive index of phase-change Ge2Sb2+xTe5 media fabricated by DC magnetron sputtering has been determined by using spectroscopic ellipsometry and atomic force microscopy. The composition of Ge2Sb2+xTe5 analyzed by Inductively Coupled Plasma/Atomic Emission Spectrometer and X-ray Fluorescence was in the range 0.08 less than or equal to x less than or equal to 0.58. The complex refractive index and the reflectivity have been verified nearly constant with Sb-addition at 780 nm, 650 nm, and 410 nm, respectively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang-Youl Kim, Sang J. Kim, Hun Seo, and Myong R. Kim "Variation of the complex refractive indices with Sb-addition in Ge-Sb-Te alloy and their wavelength dependence", Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998); https://doi.org/10.1117/12.327935
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KEYWORDS
Refractive index

Crystals

Reflectivity

Antimony

Solids

Spectroscopic ellipsometry

Atomic force microscopy

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