Laser-induced synthesis of InN in NH3 atmosphere: diagnostics of intermediates and InN thin film deposition

Anna Giardini-Guidoni; T. M. Di Palma; Veronica Marotta; R. Teghil; G. Cicala

doi:10.1117/12.308656

26 May 1998 Laser-induced synthesis of InN in NH₃ atmosphere: diagnostics of intermediates and InN thin film deposition

Anna Giardini-Guidoni, T. M. Di Palma, Veronica Marotta, R. Teghil, G. Cicala

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308656
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Reactive Pulsed Laser Ablation and Deposition has been applied to the production of InN thin films. Emission spectroscopy and Time of Flight mass spectrometry have been used for the diagnostics of the intermediates formed by reaction of indium atoms and ammonia. The ionization potential (IP) of In(NH₃) cluster has been measured and a strong red shift respect to the IP of bare indium atom has been found. This result indicates that the lone pair of the ammonia strongly interacts with the empty 5p orbitals of In and that the cation In(NH₃)⁺ is more strongly bounded than the corresponding neutral complex. The InN thin films produced through the reaction of In atoms and NH₃ have been characterized by conventional techniques.

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Anna Giardini-Guidoni, T. M. Di Palma, Veronica Marotta, R. Teghil, and G. Cicala "Laser-induced synthesis of InN in NH₃ atmosphere: diagnostics of intermediates and InN thin film deposition", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308656

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KEYWORDS

Indium nitride

Indium

Thin films

Diagnostics

Thin film deposition

Chemical species

Mass spectrometry

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