Laser spectroscopy of silicon nanostructures

Yoshihiko Kanemitsu

doi:10.1117/12.308636

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26 May 1998 Laser spectroscopy of silicon nanostructures

Yoshihiko Kanemitsu

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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308636
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

We discuss the mechanism of efficient photoluminescence (PL) from Si nanocrystals. Luminescence properties of SiO₂- capped Si nanocrystals are different from those of H- passivated Si nanocrystals. The size-dependence of PL properties and resonantly excited PL spectra of SiO₂- capped Si nanocrystals indicate that excitons are localized at the interface between c-Si and SiO₂ surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. H-passivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disorder nature. The luminescence properties of Si nanocrystals are discussed.

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Yoshihiko Kanemitsu "Laser spectroscopy of silicon nanostructures", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308636

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