Amorphous silicon photodetectors for optical integrated circuits

M. Balucani; V. Bondarenko; G. Lamedica; A. Ricciardelli; A. Ferrari

doi:10.1117/12.312663

2 July 1998 Amorphous silicon photodetectors for optical integrated circuits

M. Balucani, V. Bondarenko, G. Lamedica, A. Ricciardelli, A. Ferrari

Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312663
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania

Abstract

The first successful attempt to integrate on-chip optical waveguides based on oxidized porous silicon and amorphous silicon photodetectors have been demonstrated. Buried channel waveguides were performed by thermal oxidation of porous silicon. Amorphous silicon photodetectors were fabricated on the waveguides. Different device structures as well as their performance attributes are exhibited. The devices were demonstrated to have photocurrent characteristics promising for optoelectronic applications.

Citation Download Citation

M. Balucani, V. Bondarenko, G. Lamedica, A. Ricciardelli, and A. Ferrari "Amorphous silicon photodetectors for optical integrated circuits", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312663

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