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2 July 1998 Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312674
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
The ferroelectric/semiconductor heterostructures were fabricated by sol-gel deposition of lead titanate (PT) thin films on a single-crystalline p-type Si wafers. The PT films were crystallized by a conventional thermal annealing for 30 min at temperatures ranging from 575 degree(s)C to 675 degree(s)C. Current-voltage and capacitance-voltage characteristics show a hysteresis which can be due to the spontaneous polarization of PbTiO3. The current-voltage characteristics exhibit a diode behavior while the capacitance-voltage exhibits a large memory window, up to 3.5 V, for the films annealed at 600 - 650 degree(s)C. At the illumination with modulated light, a.c. photovoltage was detected on a broad range of wavelengths (0.35 divided by 4 micrometers ) for all samples. The spectral distribution of the photoelectric signal in the UV-Vis- IR domain shows two local maxima. A model is proposed to explain the observed experimental results.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Dragoi, Lucian Pintilie, Ioana Pintilie, D. Petre, I. Boerasu, and M. Alexe "Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312674
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