Paper
2 July 1998 Nonlinear transmission of ultrashort light pulses by a thin semiconductor film in the exciton range of the spectrum
P. I. Khadzhi, S. L. Gaivan
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312793
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
A study is reported of the influence of the saturation of the dipole momentum of an exciton transition on transient transmission of ultrashort laser pulses by a thin semiconductor film in the exciton range of spectrum. It is shown that when rectangular pulses of resonant laser radiation are incident on the film, a threshold-type qualitative change in the transmission by the film takes place from almost total reflection at low level of excitation to complete bleaching at high values of the incident pulse amplitude. An analog of the McCall-Hahn area theorem is derived for ultrashort pulses interacting with the film. When the nonlinear parameter is large, the dependence of the area of a pulse transmitted by the film on the area of an incident pulse becomes multivalued.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. I. Khadzhi and S. L. Gaivan "Nonlinear transmission of ultrashort light pulses by a thin semiconductor film in the exciton range of the spectrum", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312793
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KEYWORDS
Excitons

Thin films

Semiconductors

Ultrafast phenomena

Reflection

Francium

Erbium

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