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7 September 1998 CMOS active pixel image sensor with CCD performance
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Proceedings Volume 3410, Advanced Focal Plane Arrays and Electronic Cameras II; (1998)
Event: SYBEN-Broadband European Networks and Electronic Image Capture and Publishing, 1998, Zurich, Switzerland
A color CMOS image sensor has been developed which meets the performance of mainstream CCDs. The pixel combines a high fill factor with a low diode capacitance. This yields a high light sensitivity, expressed by the conversion gain of 9 (mu) V/electron and the quantum efficiency fill factor product of 28 percent. The temporal noise is 63 electrons, and the dynamic range is 67 dB. An offset compensation circuit in the column amplifiers limits the peak-to-peak fixed pattern noise to 0.15 percent of the saturation voltage.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guy Meynants, Bart Dierickx, and Danny Scheffer "CMOS active pixel image sensor with CCD performance", Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998);


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