High-density plasma dry etch for DUV attenuated phase-shifting masks

Song Peng; William J. Adair

doi:10.1117/12.328811

1 September 1998 High-density plasma dry etch for DUV attenuated phase-shifting masks

Song Peng, William J. Adair

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328811
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

Attenuated phase-shifting masks have gained wide acceptance in the manufacturing environment during the last few years. Etching attenuated films remains a challenging process step that affects several critical mask parameters including critical dimension (CD) and phase angle. This paper reports the result of etching MoSi attenuated phase-shifting materials using an inductively coupled plasma system. CD and phase-control performance is presented as well as a performance comparison between ICP and reactive ion etching. Attenuated PSMs have typically been used primarily for contact-type patterns. However, recent lithographic simulation result show significant benefits of attenuated PSM with off-axis illumination for gate-type patterns. Fabrication of gate-type attenuated PSMs introduces new challenges for the etch process. Initial etch performance result are also presented.

Citation Download Citation

Song Peng and William J. Adair "High-density plasma dry etch for DUV attenuated phase-shifting masks", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328811

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