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1 September 1998 Impact on mask technology from the viewpoint of DRAM trend
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328805
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
The development of DRAM is currently in transition from a 0.25 micrometers design rule for 256Mbit DRAM to a 0.18 micrometers design rule for 1 Gbit DRAM. There are five important points to improving mask technology for DRAM fabrication below 0.18 micrometers design rule. One is good CD linearity between mask pattern size and design pattern size with minimal pattern size and density dependence. Second is high defect inspection sensitivity and good repair capability in PSM and OPC mask patterns, any angle patterns, and contact patterns, because printing pattern defects are caused not only by mask defects but also by limitations of lithographic resolution. Third is a small minimum address size which needs to be below 0.005 micrometers for memory cell design. Fourth is large reticle size which should be greater than the current 6- inches for multi-die reticles. The fifth and final point is new pellicle material research which is needed for ArF lithography.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuniaki Koyama "Impact on mask technology from the viewpoint of DRAM trend", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328805
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