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1 September 1998 Present status and technical issues of x-ray lithography
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328845
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
The past several years have seen many improvements in a wide range of lithographic components of x-ray lithography using synchrotron radiation, including compact SR sources, vertical steppers, x-ray mask, and resist materials, to overcome the low-throughput problem, to improve overlay accuracy, and to make SR lithography a viable and practical method. SR lithography has been used in the test fabrication of LSIs in 0.2- and 0.1- micrometers regions, and has demonstrated an ability to manufacture future LSIs. The infrastructure for widespread industrial use is now beginning to form.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kimiyoshi Deguchi, Jiro Nakamura, Kazuya Nakanishi, and Tadahito Matsuda "Present status and technical issues of x-ray lithography", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328845
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