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1 September 1998 Subresolution assist feature masks for 0.2-μm window pattern formation
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328824
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
An assist-feature mask was fabricated for 0.2 micrometers window pattern formations using a dry etching process. Although the mask's assist-features were as small as 0.68 micrometers , mask inspection was successfully carried out using the cell-shift method. In addition, defects in assist-features were repaired by use of a laser mask repair system. The lithographic performance of this assist-feature mask was compared with that of a conventional mask, using a 4x KrF excimer laser exposure tool and a 0.7 micrometers thick positive resist. The numerical aperture (NA) of the exposure tool was 0.55 and annular illumination was used. The depth of focus of the 0.2 micrometers window was improved from 0.4 to 0.6 micrometers . Moreover, it was confirmed that defects in the assist- feature have little influence on the focus latitude of the main pattern. The DOF of patterns repaired with this technique recovered to nearly the same as that of the no- defect pattern.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadao Yasuzato, Shinji Ishida, Hiroyoshi Tanabe, Akihiko Andou, Tatuya Kamata, Yoji Tonooka, and Hiroyuki Shigemura "Subresolution assist feature masks for 0.2-μm window pattern formation", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328824
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