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17 September 1998 Monolithic integration of multiple-emission-wavelength laser diodes using low-energy ion implantation
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Proceedings Volume 3413, Materials Modification by Ion Irradiation; (1998)
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada
A monolithic optoelectronic chip containing multiple emission wavelength laser diodes has been developed. The semiconductor quantum well lasers have Fabry-Perot cavities of 500 micrometers in length. Electrical insulation between individual integrated devices has been achieved by wet etching the top contact layer and by a lift-off of the surface metal contact between the different lasers. The electroluminescence peak emission spectra of the integrated laser diodes has been shifted over a 25 nm range and 74 nm for discrete devices. Blueshifting of the emission wavelength has been achieved by quantum well intermixing using an industrial low energy ion implanter to generate point defects and a rapid thermal annealer to promote interdiffusion of the barrier and quantum well atoms during the recrystallization anneal. Phosphorus ions were implanted with an energy of 360 keV to precisely defined regions of the heterostructure with SiO2 serving as a masking material. Thus reference and intermixed regions were integrated on a single component. Integrated and discrete laser diodes have been assessed in terms of threshold currents and emission wavelengths.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Aimez, Michel Paquette, Jacques Beauvais, Jean Beerens, Philip J. Poole, and N. Sylvain Charbonneau "Monolithic integration of multiple-emission-wavelength laser diodes using low-energy ion implantation", Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998);

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