Paper
22 June 1998 High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers
Shin Shem Pei, C.H. Thompson Lin, Bao Hua Yang, Han Q. Le, Rui Q. Yang, Dongxu Zhang, Stefan J. Murry, Jun Zheng
Author Affiliations +
Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190Y (1998) https://doi.org/10.1117/12.311018
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
High power and high quantum efficiency operation of both diode-pumped and interband cascade lasers based on InAs/Ga(In)Sb type-II quantum well with a broken gap band alignment have been demonstrated. The interband cascade laser yielded 0.5 W peak and 16 mW average output per facet under 1- and 5-microsecond(s) long pulses at 80K, while the optically pumped 4-micrometers devices yielded 0.9-1.6 W peak and 90-150 mW average output per facet for 0.1- to 1-ms long pulses at 71K. These output powers are among the highest long-pulse results reported from any semiconductor laser at these wavelengths.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shin Shem Pei, C.H. Thompson Lin, Bao Hua Yang, Han Q. Le, Rui Q. Yang, Dongxu Zhang, Stefan J. Murry, and Jun Zheng "High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190Y (22 June 1998); https://doi.org/10.1117/12.311018
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum cascade lasers

High power lasers

Quantum wells

Mid-IR

Optical pumping

Quantum efficiency

Semiconductor lasers

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