Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs

Jun-Wei Tsai; Fang-Chen Luo; HuangChung Cheng

doi:10.1117/12.311059

17 June 1998 Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs

Jun-Wei Tsai, Fang-Chen Luo, HuangChung Cheng

Proceedings Volume 3421, Display Technologies II; (1998) https://doi.org/10.1117/12.311059
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

The performance of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is influenced by the effective intrinsic a-Si:H thickness which is the remaining thickness of intrinsic a-Si:H after n⁺-Si etching for back- channel-etch type a-Si:H TFTs. As the thickness of the as- deposited a-Si:H increases, the on-current and linear mobility of the TFT decrease significantly, but the threshold voltage and saturation mobility only change slightly. It is caused by the series resistance and space- charge-limited current for the as-deposited a-Si:H film. On the other hand, when the thickness of the a-Si:H after n⁺-Si etching decreases from 200 nm to 150 nm, the I_on, (mu) _s, (mu) _lin, and V_th do not change greatly. However, if the effective thickness of a-Si:H reduces to 50 nm, the I_on, (mu) _s, and (mu) _lin decrease and V_th increase. It is the result of the Fermi level pinning at the back-channel surface and plasma-damage for thin a-Si after n⁺-Si etching.

Citation Download Citation

Jun-Wei Tsai, Fang-Chen Luo, and HuangChung Cheng "Effect of effective intrinsic a-Si:H thickness for backchannel-etch-type a-Si TFTs", Proc. SPIE 3421, Display Technologies II, (17 June 1998); https://doi.org/10.1117/12.311059

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